State of the art of high temperature power electronics

被引：303

作者：

Buttay, Cyril ^{[1
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Planson, Dominique ^{[1
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Allard, Bruno ^{[1
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Bergogne, Dominique ^{[1
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Bevilacqua, Pascal ^{[1
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Joubert, Charles ^{[1
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Lazar, Mihai ^{[1
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,4
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Martin, Christian ^{[1
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Morel, Herve ^{[1
,2
,3
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Tournier, Dominique ^{[1
,2
,3
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Raynaud, Christophe ^{[1
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,3
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机构：

[1] Univ Lyon, F-69003 Lyon, France

[2] INSA Lyon, F-69621 Villeurbanne, France

[3] Univ Lyon 1, F-69622 Villeurbanne, France

[4] CNRS, Lab Ampere, UMR5005, F-75700 Paris, France

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2011年 / 176卷 / 04期

关键词：

High-temperature electronics; Power electronics; Silicon carbide; Semiconductor devices; JOINING TECHNIQUE; DEVICES; RELIABILITY; PERFORMANCE; OPERATION;

D O I：

10.1016/j.mseb.2010.10.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High temperature power electronics has become possible with the recent availability of silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate at temperatures above 500 C, whereas silicon is limited to 150-200 C. Applications such as transportation or a deep oil and gas wells drilling can benefit. A few converters operating above 200 C have been demonstrated, but work is still ongoing to design and build a power system able to operate in harsh environment (high temperature and deep thermal cycling). (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：283 / 288

页数：6

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