Revealing the Preferred Interlayer Orientations and Stackings of Two-Dimensional Bilayer Gallium Selenide Crystals

被引：49

作者：

Li, Xufan ^{[1
]}

Basile, Leonardo ^{[1
,2
]}

Yoon, Mina ^{[1
]}

Ma, Cheng ^{[1
]}

Puretzky, Alexander A. ^{[1
]}

Lee, Jaekwang ^{[1
]}

Idrobo, Juan C. ^{[1
]}

Chi, Miaofang ^{[1
]}

Rouleau, Christopher M. ^{[1
]}

Geohegan, David B. ^{[1
]}

Xiao, Kai ^{[1
]}

机构：

[1] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

[2] Escuela Politec Nacl, Dept Fis, Quito, Ecuador

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2015年 / 54卷 / 09期

关键词：

gallium selenide; interlayer orientation; monolayers; stacking; vapor-phase deposition; GRAPHENE; MOS2; POLARIZATION; TRANSITION; GROWTH; SPIN;

D O I：

10.1002/anie.201409743

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Characterizing and controlling the interlayer orientations and stacking orders of two-dimensional (2D) bilayer crystals and van der Waals (vdW) heterostructures is crucial to optimize their electrical and optoelectronic properties. The four polymorphs of layered gallium selenide (GaSe) crystals that result from different layer stackings provide an ideal platform to study the stacking configurations in 2D bilayer crystals. Through a controllable vapor-phase deposition method, bilayer GaSe crystals were selectively grown and their two preferred 0 degrees or 60 degrees interlayer rotations were investigated. The commensurate stacking configurations (AA and AB stacking) in as-grown bilayer GaSe crystals are clearly observed at the atomic scale, and the Ga-terminated edge structure was identified using scanning transmission electron microscopy. Theoretical analysis reveals that the energies of the interlayer coupling are responsible for the preferred orientations among the bilayer GaSe crystals.

引用

页码：2712 / 2717

页数：6

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