Growth of MgTiO3 thin films by pulsed laser deposition and their electrical properties

被引：9
|
作者：
Kang, S [1 ]
Lim, W [1 ]
Lee, J [1 ]
机构：
[1] Sungkyunkwan Univ, Dept Mat Engn, Suwon 440746, South Korea
来源：
INTEGRATED FERROELECTRICS | 2000年 / 31卷 / 1-4期
关键词：
MgTiO3; pulsed laser deposition; thin films; microwave;
D O I：
10.1080/10584580008215644
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
MgTiO3 thin films have been grown on various substrates by pulsed laser deposition (PLD) to investigate the application for microwave dielectrics and optical devices. Highly oriented MgTiO3 thin films were obtained on sapphire (c-plane Al2O3) MgTiO3 thin films deposited on SiO2/Si and platinized silicon (Pt/Ti/SiO2/Si) substrates were polycrystalline nature. MgTiO(3)thin films grown on sapphire were transparent in the visible and had a sharp absorption edge at 280 nm. These MgTiO3 thin films had extremely fine feature of surface morphology, i.e., rms roughness of 0.87 nm. Dielectric constant and loss of MgTiO3 thin films deposited by PLD were about 24 and 1.5% at 1MHz, respectively. These MgTiO3 thin films also exhibited little dielectric dispersion.
引用
收藏
页码：97 / 104
页数：8
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