Free-carrier absorption in Be- and C-doped GaAs epilayers and far infrared detector applications

被引：36
作者：
Korotkov, AL [1 ]
Perera, AGU
Shen, WZ
Herfort, J
Ploog, KH
Schaff, WJ
Liu, HC
机构：
[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA
[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
[3] Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA
[4] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 06期
关键词：
D O I：
10.1063/1.1347002
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Far infrared (FIR) absorption, reflection, and transmission in heavily doped p-GaAs multilayer structures have been measured for wavelengths 20-200 mum and compared with the calculated results. Both Be (in the range 3x10(18)-2.6x10(19) cm(-3)) and C (1.8x10(18)-4.7x10(19) cm(-3))-doped structures were studied. It is found that the observed absorption, reflection, and transmission are explained correctly by the model with a dominant role of free-carrier absorption in highly doped regions. High reflection from heavily doped thick layers is attractive for the resonant cavity enhanced FIR detectors. (C) 2001 American Institute of Physics.
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页码：3295 / 3300
页数：6
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