Influence of oxygen vacancies on the photoresponse of β-Ga2O3/SiC n-n type heterojunctions

被引：71

作者：

An, Y. H. ^{[1
,2
]}

Guo, D. Y. ^{[1
,2
]}

Li, S. Y. ^{[1
]}

Wu, Z. P. ^{[1
,2
]}

Huang, Y. Q. ^{[1
,2
]}

Li, P. G. ^{[1
]}

Li, L. H. ^{[3
]}

Tang, W. H. ^{[1
,2
]}

机构：

[1] Beijing Univ Posts & Telecommun, Sch Sci, Lab Optoelect Mat & Devices, Beijing 100876, Peoples R China

[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

[3] SUNY Coll Potsdam, Dept Phys, Potsdam, NY 13676 USA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2016年 / 49卷 / 28期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

beta-Ga2O3/4H-SiC; n-n type heterojunctions; oxygen vacancies; L-MBE; SOLAR-BLIND PHOTODETECTORS; THIN-FILMS; ULTRAVIOLET PHOTODETECTORS; NANOWIRES; GROWTH;

D O I：

10.1088/0022-3727/49/28/285111

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

beta-Ga2O3/4H-SiC n-n type heterojunctions have been fabricated by depositing high quality beta-Ga2O3 films on c-axis orientation n-type 4H-SiC substrates using laser molecular beam expitaxy. The influences of oxygen vacancies on the junction performances are investigated. It is found that the existence of oxygen vacancies degrades the rectifying and photoresponse properties of the heterojunctions. A large rectification ratio of 1900, a high 254 nm ultraviolet photosensitivity of 6308% and a zero response of 365 nm ultraviolet have been achieved by reducing oxygen vacancies. It is supposed that the oxygen vacancies in Ga2O3 affect the depletion layer of the n-n junction greatly.

引用

页数：6

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