Defect induced magnetic transition in Co doped CeO2 sputtered thin films

被引：29
作者：
Murugan, R. [1 ]
Vijayaprasath, G. [1 ]
Mahalingam, T. [1 ]
Ravi, G. [1 ]
机构：
[1] Alagappa Univ, Dept Phys, Karaikkudi 630004, Tamil Nadu, India
来源：
CERAMICS INTERNATIONAL | 2016年 / 42卷 / 10期
关键词：
Cerium oxide; rf Sputtering; Cobalt doping; Ferromagnetism; Thin films; ROOM-TEMPERATURE FERROMAGNETISM; STRUCTURAL-PROPERTIES; OPTICAL-PROPERTIES; RAMAN; PR; DEPOSITION; OXIDATION;
D O I：
10.1016/j.ceramint.2016.04.091
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Cobalt-doped cerium dioxide thin films exhibit room temperature ferromagnetism due to high oxygen mobility in doped CeO2 lattice. CeO2 is an excellent doping matrix as there is a possibility of it losing oxygen while retaining its structure. This leads to increased oxygen mobility within the fluorite CeO2 lattice, leading to formation of Ce3+ and Ce4+ species. Magnetic ceria materials are important in several applications from magnetic data storage devices to magnetically recoverable catalysts. In this paper, the room temperature ferromagnetism of rf sputtered Co doped CeO2 thin films is reported whereas un-doped CeO2 thin films exhibit paramagnetic behavior. The ferromagnetic properties of the Co doped films were explained based on oxygen vacancies created by Co ions in Ce sites. This is further supported by X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and Raman. Change in surface morphology due to Co doping of the samples were analyzed using atomic force microscopy (AFM). (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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收藏
页码：11724 / 11731
页数：8
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