Carrier lifetime under low and high electric field conditions in semi-insulating GaAs

被引：24

作者：

Rogalla, M ^{[1
]}

Geppert, R ^{[1
]}

Goppert, R ^{[1
]}

Hornung, M ^{[1
]}

Ludwig, J ^{[1
]}

Schmid, T ^{[1
]}

Irsigler, R ^{[1
]}

Runge, K ^{[1
]}

Soldner-Rembold, A ^{[1
]}

机构：

[1] Univ Freiburg, Fak Phys, D-79104 Freiburg, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1998年 / 410卷 / 01期

关键词：

D O I：

10.1016/S0168-9002(98)00140-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The mobility lifetime product of holes and electrons under low electric field conditions was determined by alpha spectroscopy using SI-GaAs as a photo conductivity detector. The lifetime in high electric field ( greater than or equal to 10(4)V/cm) of electrons was investigated with Schottky diodes. Both results were analyzed as a function of substrate resistivity and trap concentrations. We identified the ionized arsenic antisite defect (EL2(+)) as the dominant electron trap in the high field region and determined the capture cross-section as being (8.0 +/- 0.6)x 10(-14) cm(2). (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：74 / 78

页数：5

共 11 条

[1]

[Anonymous], DEEP CTR SEMICONDUCT

[2]

BERWICK K, 1997, P EXMATEC 9L MAT S B, V44, P330

[3] EXTENSION OF RAMOS THEOREM AS APPLIED TO INDUCED CHARGE IN SEMICONDUCTOR DETECTORS [J].