Metal-Assisted Chemical Vertical Etching of Si: Effect of Catalyst Morphology and Oxidant Concentration

被引：0

作者：

Deepu, B. R. ^{[1
]}

Kallat, Sangeeth ^{[1
]}

Suresh, A. ^{[1
]}

Savitha, P. ^{[1
]}

机构：

[1] Indian Inst Sci, Natl Nanofabricat Ctr, Ctr Nanosci & Engn, Bangalore 560012, Karnataka, India

来源：

2014 IEEE 2ND INTERNATIONAL CONFERENCE ON EMERGING ELECTRONICS (ICEE) | 2014年

关键词：

Si vertical etching; reactant ratios; sputtering rates; surface morphology; Scanning electron microscopy; SILICON;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Deep vertical etching of Si using hydrogen peroxide as oxidant and Au as catalyst has been studied in terms of relative reactant concentrations and catalyst morphology. The concentrations of hydrogen peroxide and hydrofluoric acid are highly important and the ratio of the same can be varied to achieve isotropic to highly anisotropic vertical etching. Catalyst morphology and positioning of the substrate was also seen to affect vertical etch profiles, with high catalyst deposition rates and horizontal placement of the sample giving deep etching without defects.

引用

页数：3

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