Strain relaxation and compositional separation during growth of InGaAs/GaAs(001)

被引：9
作者：
Deki, Ryota [1 ]
Sasaki, Takuo [2 ]
Takahasi, Masamitu [1 ,2 ]
机构：
[1] Univ Hyogo, Kamigori, Hyogo 6781297, Japan
[2] Natl Inst Quantum & Radiol Sci & Technol, Synchrotron Radiat Res Ctr, Sayo, Hyogo 6795148, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2017年 / 468卷
关键词：
X-ray diffraction; Molecular beam epitaxy; Semiconducting gallium arsenide; MOLECULAR-BEAM-EPITAXY; CRITICAL LAYER THICKNESS; X-RAY-DIFFRACTION; MISFIT DISLOCATIONS; SURFACE-MORPHOLOGY; INGAAS; GAAS; HETEROSTRUCTURES; EQUILIBRIUM; INXGA1-XAS;
D O I：
10.1016/j.jcrysgro.2017.01.028
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Strain relaxation of InxGa1-xAs/GaAs(001) with systematically changed In content between x=0.23 and x=0.80 has been studied using in situ synchrotron X-ray diffraction during molecular beam epitaxy growth. Correlation between the In composition and the degree of relaxation in the InGaAs films was derived from the reciprocal space maps. While InGaAs with a uniform composition was grown in the regime of the two-dimensional growth, a separation of the In composition was observed for the InGaAs films grown in the Stranski-Krastanov mode.
引用
收藏
页码：241 / 244
页数：4
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