Interfacial Transitional Layer in SiO2 Film Thermally Grown on SiC(000-1)

被引:1
作者
Nagai, Ryu [1 ]
Iitsuka, Nozomu [1 ]
Ozawa, Kodai [1 ]
Hasunuma, Ryu [1 ]
Yamabe, Kikuo [1 ]
机构
[1] Univ Tsukuba, Tsukuba, Ibaraki 3058573, Japan
来源
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 6 | 2016年 / 75卷 / 12期
关键词
OXIDATION; SPECTROSCOPY; CARBIDE;
D O I
10.1149/07512.0123ecst
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The uniformity of SiO2 film thermally grown on 4H-SiC was characterized by atomic force microscopic observation of the emerged SiO2 surface after each step-etching using diluted HF solution. It was found that roughness of the emerged SiO2 surface drastically increases near the SiO2/SiC interface. This means that the film quality near the interface is not two-dimensionally uniform. On the other hand, the amount of roughness increase at the middle region was small, indicating the middle region is uniform film. These results indicate that the region is two-dimensionally uniform and the oxide film contains non-uniformly when just after being formed, and then the two-dimensional film uniformity is gradually improved during subsequent oxidation. Density profiles of SiO2 films were also characterized. The uniformity improvement is discussed in terms of impurity desorption and film density.
引用
收藏
页码:123 / 129
页数:7
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