Metal/SrTiO3 two-dimensional electron gases for spin-to-charge conversion

被引:18
作者
Vicente-Arche, Luis M. [1 ]
Mallik, Srijani [1 ]
Cosset-Cheneau, Maxen [2 ]
Noel, Paul [2 ,4 ]
Vaz, Diogo C. [1 ,5 ]
Trier, Felix [1 ,6 ]
Gosavi, Tanay A. [3 ]
Lin, Chia-Ching [3 ]
Nikonov, Dmitri E. [3 ]
Young, Ian A. [3 ]
Sander, Anke [1 ]
Barthelemy, Agnes [1 ]
Attane, Jean-Philippe [2 ]
Vila, Laurent [2 ]
Bibes, Manuel [1 ]
机构
[1] Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France
[2] Univ Grenoble Alpes, IRIG Spintec, INP, CNRS,CEA, Grenoble, France
[3] Intel Corp, Components Res, Hillsboro, OR 97124 USA
[4] Swiss Fed Inst Technol, Dept Mat, Honggerbergring 64, CH-8093 Zurich, Switzerland
[5] CIC NanoGUNE BRTA, Tolosa Hiribidea 76, San Sebastian 20018, Spain
[6] Tech Univ Denmark, Dept Energy Conservat & Storage, DK-2800 Lyngby, Denmark
基金
欧洲研究理事会;
关键词
TUNNEL-JUNCTIONS; OXIDE; INTERFACE; EFFICIENT;
D O I
10.1103/PhysRevMaterials.5.064005
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
SrTiO3-based two-dimensional electron gases (2DEGs) can be formed through the deposition of epitaxial oxides like LaAlO3 or of reactive metals such as Al. Such 2DEGs possess a finite Rashba spin-orbit coupling that has recently been harnessed to interconvert charge and spin currents through the direct and inverse Edelstein and spin Hall effects. Here we compare the formation and properties of 2DEGs generated in SrTiO3 by the growth of Al, Ta, and Y ultrathin films by magnetron sputtering. By combining in situ and ex situ x-ray photoelectron spectroscopy (XPS) we gain insight into the reduction of the SrTiO3 and the appearance of Ti3+ states associated with 2DEG formation, its reoxidation by exposure to the air, and the transformation of the metal into its binary oxides. We extract the carrier densities through magnetotransport and compare them with the XPS data. Finally, working with samples covered by an extra layer of NiFe, we perform spin-pumping ferromagnetic resonance experiments and investigate spin-charge conversion as a function of gate voltage. We identify trends in the data across the different sample systems and discuss them as a function of the carrier density and the transparency of the metal oxide tunnel barrier.
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页数:10
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