A 4-mb toggle MRAM based on a novel bit and switching method

被引：363

作者：

Engel, BN ^{[1
]}

Akerman, J ^{[1
]}

Butcher, B ^{[1
]}

Dave, RW ^{[1
]}

DeHerrera, M ^{[1
]}

Durlam, M ^{[1
]}

Grynkewich, G ^{[1
]}

Janesky, J ^{[1
]}

Pietambaram, SV ^{[1
]}

Rizzo, ND ^{[1
]}

Slaughter, JM ^{[1
]}

Smith, K ^{[1
]}

Sun, JJ ^{[1
]}

Tehrani, S ^{[1
]}

机构：

[1] Freescale Semicond, Chandler, AZ 85224 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2005年 / 41卷 / 01期

关键词：

magnetic film memories; magnetic tunnel junction; magnetoresistive device; magnetoresistive random access memory (MRAM); micromagnetic switching; MRAM integration; random access memories (RAMs);

D O I：

10.1109/TMAG.2004.840847

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-mum complementary metal-oxide-semiconductor process with a bit cell size of 1.55 mum(2). The new bit cell uses a balanced synthetic antiferromagnetic free layer and a phased write pulse sequence to provide robust switching performance with immunity from half-select disturbs. This switching mode greatly improves the operational performance of the MRAM as compared to conventional MRAM. A detailed description of this 4-Mb toggle MRAM is presented.

引用

页码：132 / 136

页数：5

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