Effect of series and parallel resistance on low-frequency noise level in semiconductor lasers

被引:0
作者
Hu, GJ [1 ]
机构
[1] Jilin Univ, Dept Opt Commun, Coll Commun Engn, Changchun 130012, Peoples R China
来源
SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES | 2005年 / 5624卷
关键词
semiconductor lasers; resistance; noise; reliability;
D O I
10.1117/12.570202
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
By placing the semiconductor lasers in series or parallel with different resistances, the effects of series and parallel resistances on noise level of devices are studied. The effects of serial and parallel resistances on device quality and the correlations between the noise level and reliability of semiconductor lasers are also discussed. The results indicate that the noise level does not change obviously when the devices are placed with serial resistance. At the bias current of 5mA, the parallel resistance also has no obviously effect on noise level. But, when the bias current is 20 mu A, the parallel resistance makes noise level of devices decrease evidently. The devices with lower noise may also be unreliabile.
引用
收藏
页码:554 / 557
页数:4
相关论文
共 6 条
  • [1] A STUDY OF OPTICAL NOISE MEASUREMENT AS A RELIABILITY ESTIMATION FOR LASER-DIODES
    DAI, YS
    SHI, JS
    ZHANG, XF
    SHI, JW
    JIN, ES
    [J]. MICROELECTRONICS AND RELIABILITY, 1995, 35 (04): : 731 - 734
  • [2] Noise as reliability screening for semiconductor lasers
    Guijun, H
    Jiawei, S
    Xiaosong, Y
    Jing, L
    [J]. APPLIED PHYSICS B-LASERS AND OPTICS, 2003, 76 (04): : 359 - 363
  • [3] Extended noise analysis - a novel tool for reliability screening
    Hartler, G
    Gole, U
    Paschke, K
    [J]. MICROELECTRONICS AND RELIABILITY, 1998, 38 (6-8): : 1193 - 1198
  • [4] The low-frequency electrical noise as reliability estimation for high power semiconductor lasers
    Hu, GJ
    Shi, JW
    Zhang, SM
    Li, YJ
    [J]. OPTICAL AND QUANTUM ELECTRONICS, 2002, 34 (10) : 987 - 992
  • [5] Motchenbacher F. C., 1973, Low-Noise Electronic Design
  • [6] SHI JW, 1994, MICROELECTRON RELIAB, V34, P1261, DOI 10.1016/0026-2714(94)90512-6