Sharp Change in the Exchange Bias and the Magnetic Anisotropy Symmetry at a Subthreshold Interlayer Copper Content in NiFe/Cu/IrMn Heterostructures

被引:2
作者
Bakhmet'ev, M. V. [1 ]
Talantsev, A. D. [1 ,2 ]
Morgunov, R. B. [1 ,3 ]
机构
[1] Russian Acad Sci, Inst Problems Chem Phys, Chernogolovka 142432, Moscow Oblast, Russia
[2] DGIST, Dept Emerging Mat Sci, Daegu 42988, South Korea
[3] First Moscow State Med Univ, Moscow 119991, Russia
基金
新加坡国家研究基金会;
关键词
ELECTRICAL-CONDUCTIVITY; DC CONDUCTIVITY; DEPENDENCE; LAYER; AC;
D O I
10.1134/S1063776121050010
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The NiFe/Cu/IrMn heterostructures with a variable number of interlayer Cu atoms exhibit a sharp change in the exchange-bias field, the coercive force, and the unidirectional anisotropy field at an effective copper layer thickness t(Cu) approximate to 0.5 nm, which corresponds to incomplete coverage of the interface, i.e., to an island deposited structure. The symmetry of the angular dependence of the ferromagnetic resonance changes sharply at an incompletely coated interface (t(Cu) = 0.5 nm), which corresponds to a transition from isolated islands to a magnetic fractal structure. This phenomenon, which can be called a "magnetic" percolation threshold is not related to the electrical resistance of the heterostructure, which decreases sharply at a significantly larger effective threshold copper layer thickness (t(Cu) = 1.3 nm) when the interface is completely covered.
引用
收藏
页码:852 / 864
页数:13
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