Overcoming the excessive compressive strain in AlGaN epitaxy by introducing high Si-doping in AlN templates

被引：20

作者：

Huang, Chia-Yen ^{[1
]}

Walde, Sebastian ^{[2
]}

Tsai, Chia-Lung ^{[1
]}

Netzel, Carsten ^{[2
]}

Liu, Hsueh-Hsing ^{[1
]}

Hagedorn, Sylvia ^{[2
]}

Wu, Yuh-Renn ^{[1
,3
,4
]}

Fu, Yi-Keng ^{[1
]}

Weyers, Markus ^{[2
]}

机构：

[1] Ind Technol Res Inst, Elect & Optoelect Syst Res Labs, 195,Sec 4,Chung Hsing Rd, Hsinchu 31057, Taiwan

[2] Leibniz Inst Hoechstfrequenztech, Ferdinand Braun Inst, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany

[3] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

[4] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / 07期

关键词：

AlGaN; strain relaxation; UVC; light-emitting diodes; AlN; dislocation; LIGHT-EMITTING DIODE; REDUCTION; SAPPHIRE;

D O I：

10.35848/1347-4065/ab990a

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of compressive strain in high-quality AlN templates on the subsequent growth of AlGaN-based device layers was investigated. The AlN templates showed compressive strain of similar to-0.29% and threading dislocation densities (TDDs) below 6.5 x 10(8) cm(-2). By introducing high Si-doping in MOVPE-grown AlN, the compressive strain was relaxed while preserving the low TDD. By this method, the low TDD was transferred from the AlN template to the micron-thick n-Al0.63Ga0.37N. A 275 nm LED was demonstrated with a similar to 2.5 times power enhancement than the same LED on conventional MOVPE-grown AlN template under low current injection. The maximum external quantum efficiency (EQE) was enhanced from 1.6% to 2.2% with an improved n-AlGaN.

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页数：5

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