Enhanced hysteresis in the semiconductor-to-metal phase transition of VO2 precipitates formed in SiO2 by ion implantation

被引：98

作者：

Lopez, R

Boatner, LA

Haynes, TE

Haglund, RF

Feldman, LC

机构：

[1] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA

[2] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 19期

关键词：

D O I：

10.1063/1.1415768

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A strongly enhanced hysteresis with a width of > 34 degreesC has been observed in the semiconductor-to-metal phase transition of submicron-scale VO2 precipitates formed in the near-surface region of amorphous SiO2 by the stoichiometric coimplantation of vanadium and oxygen and subsequent thermal processing. This width is approximately an order of magnitude larger than that reported previously for the phase transition of VO2 particles formed in Al2O3 by a similar technique. The phase transition is accompanied by a significant change in infrared transmission. The anomalously wide hysteresis loop observed here for the VO2/SiO2 system can be exploited in optical data storage and switching applications in the infrared region. (C) 2001 American Institute of Physics.

引用

页码：3161 / 3163

页数：3

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