Extension of PTB's EUV metrology facilities

被引:8
|
作者
Laubis, Christian [1 ]
Fischer, Andreas [1 ]
Scholze, Frank [1 ]
机构
[1] Phys Tech Bundesanstalt, D-10587 Berlin, Germany
来源
EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY III | 2012年 / 8322卷
关键词
EUV; at-wavelength metrology; reflectometry; polarization; scatterometry; SYNCHROTRON-RADIATION; LARGE OPTICS; REFLECTOMETER;
D O I
10.1117/12.916414
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
After developing metrology with synchrotron radiation in its laboratories at the electron storage rings BESSY I and BESSY II for almost 30 years, PTB is extending its capabilities for EUV metrology with the EUV beamline at the Metrology Light Source. With the new instrumentation, PTB is prepared for the metrological challenges when EUV lithography changes over from R&D to pilot production. PTB's EUV reflectometer for large optical components, e. g. collector mirrors for LPP sources, will be transferred to this new dedicated EUV beamline. This allows us to offer services to customers independent of the operating schedule of BESSY - a basic research facility with regular shut-down times. The new beamline also provides much higher radiant power in the EUV spectral range up to 50 nm wavelength. This will particularly benefit the characterization of sensors regarding responsivity and stability, and the characterization of EUV components in the out-of-band spectral range. Reliable detector characterization is the basis for source power meters or tool-internal sensors. We present an updated overview of our new metrological capabilities with recent measurement examples.
引用
收藏
页数:9
相关论文
共 50 条
  • [31] Design, conception and metrology of EUV mirrors for aggressive environments
    Hecquet, Christophe
    Ravet-Krill, Marie-Francoise
    Delmotte, Franck
    Jerome, Arnaud
    Hardouin, Aurelie
    Bridou, Francoise
    Varniere, Francoise
    Roulliay, Marc
    Bourcier, Frederic
    Desmarres, Jean-Michel
    Costes, Vincent
    Berthon, Jacques
    Rinchet, Andre
    Geyl, Roland
    DAMAGE TO VUV, EUV, AND X-RAY OPTICS, 2007, 6586
  • [32] Metrology tools for EUV-source characterization and optimization
    Missalla, T
    Schürmann, MC
    Lebert, R
    Wies, C
    Juschkin, L
    Klein, RM
    Scholze, F
    Ulm, G
    Egbert, A
    Tkachenkod, B
    Chichkov, BN
    EMERGING LITHOGRAPHIC TECHNOLOGIES VIII, 2004, 5374 : 979 - 990
  • [33] Compact laser-induced EUV source for metrology
    Mann, K
    Barkusky, F
    Döring, S
    Kranzusch, S
    Meyer, A
    Peth, C
    EMERGING LITHOGRAPHIC TECHNOLOGIES VIII, 2004, 5374 : 423 - 437
  • [34] Aspects and new developments on edge angle and edge profile metrology at PTB
    Bodermann, Bernd
    Buhr, Egbert
    Diener, Alexander
    Dirscherl, Kai
    Ehret, Gerd
    Frase, Carl Georg
    Wurm, Matthias
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXI, PTS 1-3, 2007, 6518
  • [35] Actinic EUV-Mask metrology: tools, concepts, components
    Lebert, Rainer
    Farahzadi, Azadeh
    Diete, Wolfgang
    Schaefer, David
    Phiesel, Christoph
    Wilhein, Thomas
    Herbert, Stefan
    Maryasov, Aleksey
    Juschkin, Larissa
    Esser, Dominik
    Hoefer, Marko
    Hoffmann, Dieter
    27TH EUROPEAN MASK AND LITHOGRAPHY CONFERENCE, 2011, 7985
  • [36] Novel on-product Focus Metrology for EUV enabling direct focus monitoring and control for EUV systems
    Yim, Inbeom
    Dakeshi, Koshiba
    Hwang, Chan
    Lee, Seung Yoon
    Lee, Jeongjin
    Park, Joon-Soo
    Yueh, Jenny
    Ghavami, Ali
    Segers, Bart
    Granda, Miguel Garcia
    Gui, Yutao
    Janda, Eric
    Staals, Frank
    Lee, Se-Hui
    Yang, Seung-Bin
    Lee, Yoon-tae
    Jeon, Se-Ra
    Park, Daniel
    van West, Ewoud
    McNamara, Elliott
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXXIV, 2020, 11325
  • [37] Aerial image based metrology of EUV masks: recent achievements, status and outlook for the AIMS™ EUV platform
    Capelli, Renzo
    Hellweg, Dirk
    Dietzel, Martin
    Koch, Markus
    Wolke, Conrad
    Kersteen, Grizelda
    EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY IX, 2018, 10583
  • [38] EUV grazing-incidence lensless imaging wafer metrology
    Shen, Tao
    Ansuinelli, Paolo
    Mochi, Iacopo
    Ekinci, Yasin
    METROLOGY, INSPECTION, AND PROCESS CONTROL XXXVII, 2023, 12496
  • [39] Accelerated lifetime metrology of EUV multilayer mirrors in hydrocarbon environments
    Hill, S. B.
    Faradzhev, N. S.
    Tarrio, C.
    Lucatorto, T. B.
    Madey, T. E.
    Yakshinskiy, B. V.
    Loginova, E.
    Yulin, S.
    EMERGING LITHOGRAPHIC TECHNOLOGIES XII, PTS 1 AND 2, 2008, 6921
  • [40] A two-step method for fast and reliable EUV mask metrology
    Helfenstein, Patrick
    Mochi, Iacopo
    Rajeev, Rajendran
    Yoshitake, Shusuke
    Ekinci, Yasin
    EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY VIII, 2017, 10143