Fluorine contamination in yttrium-doped barium zirconate film deposited by atomic layer deposition

被引：10

作者：

An, Jihwan ^{[1
]}

Kim, Young Beom ^{[1
]}

Park, Joong Sun ^{[1
]}

Shim, Joon Hyung ^{[1
,2
]}

Guer, Turgut M. ^{[3
]}

Prinz, Fritz B. ^{[1
,3
]}

机构：

[1] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

[2] Korea Univ, Dept Mech Engn, Seoul 136701, South Korea

[3] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2012年 / 30卷 / 01期

关键词：

THIN-FILMS; PROTON CONDUCTIVITY; OXIDES; TRANSPORT; STABILITY; SRTIO3; WATER;

D O I：

10.1116/1.3670750

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The authors have investigated the change of chemical composition, crystallinity, and ionic conductivity in fluorine contaminated yttrium-doped barium zirconate (BYZ) fabricated by atomic layer deposition (ALD). It has been identified that fluorine contamination can significantly affect the conductivity of the ALD BYZ. The authors have also successfully established the relationship between process temperature and contamination and the source of fluorine contamination, which was the perfluoroelastomer O-ring used for vacuum sealing. The total removal of fluorine contamination was achieved by using all-metal sealed chamber instead of O-ring seals. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3670750]

引用

页数：5

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