GaN metal-semiconductor-metal UV sensor with multi-layer graphene as Schottky electrodes

被引：17

作者：

Lee, Chang-Ju ^{[1
]}

Kang, Sang-Bum ^{[1
]}

Cha, Hyeon-Gu ^{[1
]}

Won, Chul-Ho ^{[1
]}

Hong, Seul-Ki ^{[2
]}

Cho, Byung-Jin ^{[2
]}

Park, Hongsik ^{[1
]}

Lee, Jung-Hee ^{[1
]}

Hahm, Sung-Ho ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect Engn, Coll IT Engn, Taegu 702701, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

LIGHT-EMITTING-DIODES; ULTRAVIOLET PHOTODETECTORS; ALGAN/GAN HEMTS; EFFICIENCY; LAYER;

D O I：

10.7567/JJAP.54.06FF08

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated a GaN-based metal-semiconductor-metal (MSM)-type UV sensor using a multilayer graphene as transparent Schottky electrodes. The fabricated GaN MSM UV sensor showed a high photo-to-dark current contrast ratio of 3.9 x 10(5) and a UV-to-visible rejection ratio of 1.8 x 10(3) at 7 V. The as-fabricated GaN MSM UV sensor with graphene electrodes has a low bias dependence of maximum photoresponsivity and a noise-like response at a visible wavelength in the 500 nm region. These problems were successfully solved by treatment with a buffered oxide etcher (BOE), and the photoresponse characteristics of the fabricated GaN MSM UV sensor after the treatment were better than those before the treatment. (C) 2015 The Japan Society of Applied Physics

引用

页数：5

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