Charge collection properties of X-ray irradiated monolithic active pixel sensors

被引：8
|
作者：
Deveaux, M
Berst, JD
de Boer, W
Caccia, M
Claus, G
Deptuch, G
Dulinski, W
Gaycken, G
Grandjean, D
Jungermann, L
Riester, JL
Winter, M
机构：
[1] ULP, IRES, IN2P3, F-67037 Strasbourg, France
[2] ULP, LEPSI, IN2P3, F-67037 Strasbourg, France
[3] GSI Darmstadt, D-64291 Darmstadt, Germany
[4] Univ Karlsruhe, EKP, D-76128 Karlsruhe, Germany
[5] Univ Insubria, I-22100 Como, Italy
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2005年 / 552卷 / 1-2期
关键词：
monolithic active pixel sensors; CMOS; radiation hardness; tracking; solid state detectors; pixel detectors;
D O I：
10.1016/j.nima.2005.06.020
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
CMOS monolithic active pixel sensors (MAPS) constitute a novel technique for position sensitive charged particle detectors. Their development is driven by the requirements of vertex detectors for future high-energy and nuclear physics experiments as well as by those of biomedical applications, namely highly granular dosimetry. The radiation hardness of MAPS-detectors is subject to intensive studies. Their resistance against up to similar to 10(12) n(eq)/cm(2) was demonstrated [M. Deveaux, G. Claus, G. Deptuch,W. Dulinski, Y. Gornushkin, M. Winter, Nucl. Instr. and Meth. A 512 (2003) 71-76]. On the other hand, only poor data are available so far about their resistance against ionising doses. This paper summarises the results of radiation hardness studies on two different MAPS-detectors up to a dose of 1 MRad. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：118 / 123
页数：6
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