共 41 条
A photodiode with high rectification ratio based on well-aligned ZnO nanowire arrays and regioregular poly(3-hexylthiophene-2,5-diyl) hybrid heterojunction
被引:33
作者:

Yuan, Zhaolin
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机构:
Univ Elect Sci & Technol China, Sch Optoelect Informat, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China Univ Elect Sci & Technol China, Sch Optoelect Informat, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

Yu, Junsheng
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h-index: 0
机构:
Univ Elect Sci & Technol China, Sch Optoelect Informat, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China Univ Elect Sci & Technol China, Sch Optoelect Informat, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

Ma, Wenming
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h-index: 0
机构:
Univ Elect Sci & Technol China, Sch Optoelect Informat, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China Univ Elect Sci & Technol China, Sch Optoelect Informat, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

Jiang, Yadong
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h-index: 0
机构:
Univ Elect Sci & Technol China, Sch Optoelect Informat, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China Univ Elect Sci & Technol China, Sch Optoelect Informat, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
机构:
[1] Univ Elect Sci & Technol China, Sch Optoelect Informat, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
来源:
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
|
2012年
/
106卷
/
03期
基金:
美国国家科学基金会;
关键词:
NANORODS/MEH-PPV HETEROSTRUCTURE;
SENSITIZED SOLAR-CELLS;
PHOTOVOLTAIC DEVICES;
BUFFER LAYER;
ELECTROLUMINESCENCE;
TEMPERATURE;
PERFORMANCE;
D O I:
10.1007/s00339-011-6756-7
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
A photodiode was fabricated based on well-aligned ZnO nanowire arrays (ZNAs) and regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) hybrid heterojunction. The current-voltage (I-V) characteristics of ITO/ZNAs/P3HT/Ag device in the dark and under illumination with a solar simulator were investigated in detail. The results demonstrated that the device showed good diode characteristics in the dark and under illumination. The device exhibited a high rectification ratio (RR) of 3211 at 2 V and a low turn-on voltage of 0.5 V in the dark. Also, the RR of the device as a function of illumination intensity was observed, and the transportation process of charge carriers in the diode under illumination was illuminated in terms of energy band diagram.
引用
收藏
页码:511 / 515
页数:5
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