Effects of electrical stress on mid-gap interface trap density and capture cross sections in n-MOSFETs characterized by pulsed interface probing measurements

被引:0
作者
Kwon, HI
Kang, IM
Park, BG
Lee, JD
Park, SS
Ahn, JC
Lee, YH
机构
[1] Seoul Natl Univ, Inter Univ Semicond Res Ctr, Seoul 151742, South Korea
[2] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea
[3] Sejong Univ, Dept Elect Engn, Seoul 143747, South Korea
[4] Samsung Elect Ind Co Ltd, Syst LSI Div, CIS Grp, Kyunggi 449711, South Korea
关键词
D O I
10.1016/S0026-2714(03)00161-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High field electrical stress effects on the mid-gap interface trap density (D-iT0) and geometric mean capture cross sections (sigma(0)) in n-MOSFETs have been studied using the pulsed interface probing method. The results show that the PIP technique is sensitive to changes in mid-gap trap cross section values caused by the Fowler-Nordheim (F-N) electrical stress. The decrease of mid-gap trap cross sections following the F-N tunneling injection is found. Our works also provide further insight into the influence of electrical stress on mid-gap interface trap generation in n-MOSFETs without the assumption of the constant capture cross section value during F-N stresses. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:47 / 51
页数:5
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