Characterization of low-loss hydrogenated amorphous silicon films for superconducting resonators

被引：4
|
作者：
Buijtendorp, B. T. [1 ]
Bueno, J. [1 ,2 ]
Thoen, D. J. [1 ]
Murugesan, V [2 ]
Sberna, P. M. [1 ]
Baselmans, J. J. A. [1 ,2 ]
Vollebregt, S. [1 ]
Endo, A. [1 ,3 ]
机构：
[1] Delft Univ Technol, Fac Elect Engn Math & Comp Sci, Delft, Netherlands
[2] SRON Netherlands Inst Space Res, Utrecht, Netherlands
[3] Delft Univ Technol, Fac Appl Sci, Kavli Inst NanoSci, Delft, Netherlands
来源：
MILLIMETER, SUBMILLIMETER, AND FAR-INFRARED DETECTORS AND INSTRUMENTATION FOR ASTRONOMY X | 2020年 / 11453卷
关键词：
Kinetic Inductance Detectors; Millimeter-wave; Submillimeter-wave; Amorphous Silicon; Spectrometer; Filter Bank; Two-level Systems; Dielectric Loss; SUPERSPEC; VOIDS;
D O I：
10.1117/12.2562233
中图分类号：
P1 [天文学];
学科分类号：
0704 ;
摘要：
Superconducting resonators used in millimeter-submillimeter astronomy would greatly benefit from deposited dielectrics with a small dielectric loss. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor deposition, at substrate temperatures of 100 degrees C, 250 degrees C and 350 degrees C. The measured void volume fraction, hydrogen content, microstructure parameter, and bond-angle disorder are negatively correlated with the substrate temperature. All three fihns have a loss tangent below 10(-5) for a resonator energy of 10(5) photons, at 120 mK and 4-7 GHz. This makes these films promising for microwave kinetic inductance detectors and on-chip millimeter-submilimeter filters.
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收藏
页数：14
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