Characterization of low-loss hydrogenated amorphous silicon films for superconducting resonators

被引：4

作者：

Buijtendorp, B. T. ^{[1
]}

Bueno, J. ^{[1
,2
]}

Thoen, D. J. ^{[1
]}

Murugesan, V ^{[2
]}

Sberna, P. M. ^{[1
]}

Baselmans, J. J. A. ^{[1
,2
]}

Vollebregt, S. ^{[1
]}

Endo, A. ^{[1
,3
]}

机构：

[1] Delft Univ Technol, Fac Elect Engn Math & Comp Sci, Delft, Netherlands

[2] SRON Netherlands Inst Space Res, Utrecht, Netherlands

[3] Delft Univ Technol, Fac Appl Sci, Kavli Inst NanoSci, Delft, Netherlands

来源：

MILLIMETER, SUBMILLIMETER, AND FAR-INFRARED DETECTORS AND INSTRUMENTATION FOR ASTRONOMY X | 2020年 / 11453卷

关键词：

Kinetic Inductance Detectors; Millimeter-wave; Submillimeter-wave; Amorphous Silicon; Spectrometer; Filter Bank; Two-level Systems; Dielectric Loss; SUPERSPEC; VOIDS;

D O I：

10.1117/12.2562233

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

Superconducting resonators used in millimeter-submillimeter astronomy would greatly benefit from deposited dielectrics with a small dielectric loss. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor deposition, at substrate temperatures of 100 degrees C, 250 degrees C and 350 degrees C. The measured void volume fraction, hydrogen content, microstructure parameter, and bond-angle disorder are negatively correlated with the substrate temperature. All three fihns have a loss tangent below 10(-5) for a resonator energy of 10(5) photons, at 120 mK and 4-7 GHz. This makes these films promising for microwave kinetic inductance detectors and on-chip millimeter-submilimeter filters.

引用

页数：14