Epitaxial ferromagnetic Mn5Ge3 on Ge(111)

被引：172

作者：

Zeng, CG ^{[1
]}

Erwin, SC

Feldman, LC

Li, AP

Jin, R

Song, Y

Thompson, JR

Weitering, HH

机构：

[1] Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USA

[2] USN, Res Lab, Ctr Computat Mat Sci, Washington, DC 20375 USA

[3] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[4] Oak Ridge Natl Lab, Condensed Matter Sci Div, Oak Ridge, TN 37831 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 24期

关键词：

D O I：

10.1063/1.1633684

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferromagnetic Mn5Ge3 thin films were grown on Ge(111) with solid-phase epitaxy. The epitaxial relationship between the alloy film and substrate is Mn5Ge3(001)//Ge(111) with [100](Mn5)Ge-3//[1 (1) over bar0](Ge). The alloy films exhibit metallic conductivity and strong ferromagnetism up to the Curie temperature, T-C=296 K. These epitaxial alloy films are promising candidates for germanium-based spintronics. (C) 2003 American Institute of Physics.

引用

页码：5002 / 5004

页数：3

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