DEVELOPMENT OF 100 NS WIDE BLUMLEIN TRANSMISSION LINE PULSE GENERATOR FOR: STUDY OF HIGH ELECTRIC FIELD PROPERTIES IN BORON-DOPED DIAMOND

被引：0

作者：

Lambert, Nicolas ^{[1
,2
]}

Tremouilles, David ^{[3
]}

Taylor, Andrew ^{[2
]}

Hubik, Pavel ^{[4
]}

More-Chevalier, Joris ^{[2
]}

Bulir, Jiri ^{[2
]}

Mortet, Vincent ^{[2
,5
]}

机构：

[1] Univ Lille, Cent Lille, UVHC, ISEN,LIA LICS LEMAC IEMN UMR CNRS 8520, Villeneuve Dascq, France

[2] Czech Acad Sci, Inst Phys, Vvi, Prague, Czech Republic

[3] CNRS, LAAS, Toulouse, France

[4] Czech Acad Sci, Inst Phys, Prague, Czech Republic

[5] Czech Tech Univ, Fac Biomed Engn, Kladno, Czech Republic

来源：

9TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2017) | 2018年

关键词：

Impact ionization; Transmission Line Pulse generator; boron doped diamond; micro-technology;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Diamond can become highly conductive due to impurity impact ionization and avalanche effects when sufficiently doped with boron and exposed to high electric field. Knowledge of those effects is important for the fabrication of potential novel high power electronic devices. High currents and voltages make characterization of impurity impact ionization uneasy and require pulsed characterization measurement methods to limit thermal effects. In this work, we first present the synthesis of epitaxial boron doped diamond layers by Plasma Enhanced Chemical Vapour Deposition and their microfabrication process and then we study their electrical properties in high electric field. Second, we describe the home-made Transmission Line Pulse current-voltage (I-V) characterization setup based on a Blumlein pulse generator. Finally, quasi-static I-V characteristic has been measured showing impurity impact ionization and avalanche effect at high electric field.

引用

页码：924 / 929

页数：6