Nanostructured LaFeO3/Si thin films grown by pulsed laser deposition

被引：2
作者：
Jedrusik, Mateusz [1 ,2 ]
Turquat, Christian [1 ]
Cieniek, Lukasz [2 ]
Kopia, Agnieszka [2 ]
Leroux, Christine [1 ]
机构：
[1] Univ Toulon & Var, AMU, CNRS, IM2NP, CS 60584, F-83041 Toulon, France
[2] AGH Univ Sci & Technol, Fac Met Engn & Ind Comp Sci, Al Mickiewicza 30, PL-30059 Krakow, Poland
来源：
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2021年 / 96卷 / 03期
关键词：
PEROVSKITE-TYPE OXIDES; X-RAY; TEMPERATURE; STABILITY; METHANE; GAS;
D O I：
10.1051/epjap/2021210195
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The orthorhombic LaFeO3 thin films grown by pulsed laser deposition on silicon showed nano-structuration of their surface and preferential crystallographic exposed facets, depending on the deposition temperature. The LaFeO3 film deposited at 850 degrees C has two types of grain termination, flat or tip-like, corresponding to two different growth directions, respectively [110] and [200]. However, due to the shape of the termination, the two types of grains expose the same {110} facets. The prepared lanthanum iron oxide films are iron deficient and consequently contains oxygen vacancies, the exact chemical formula being LaFe0.82O3-delta.
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页数：9
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