Nanostructured LaFeO3/Si thin films grown by pulsed laser deposition

被引：2

作者：

Jedrusik, Mateusz ^{[1
,2
]}

Turquat, Christian ^{[1
]}

Cieniek, Lukasz ^{[2
]}

Kopia, Agnieszka ^{[2
]}

Leroux, Christine ^{[1
]}

机构：

[1] Univ Toulon & Var, AMU, CNRS, IM2NP, CS 60584, F-83041 Toulon, France

[2] AGH Univ Sci & Technol, Fac Met Engn & Ind Comp Sci, Al Mickiewicza 30, PL-30059 Krakow, Poland

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2021年 / 96卷 / 03期

关键词：

PEROVSKITE-TYPE OXIDES; X-RAY; TEMPERATURE; STABILITY; METHANE; GAS;

D O I：

10.1051/epjap/2021210195

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The orthorhombic LaFeO3 thin films grown by pulsed laser deposition on silicon showed nano-structuration of their surface and preferential crystallographic exposed facets, depending on the deposition temperature. The LaFeO3 film deposited at 850 degrees C has two types of grain termination, flat or tip-like, corresponding to two different growth directions, respectively [110] and [200]. However, due to the shape of the termination, the two types of grains expose the same {110} facets. The prepared lanthanum iron oxide films are iron deficient and consequently contains oxygen vacancies, the exact chemical formula being LaFe0.82O3-delta.

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页数：9

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