MgxZn1-xO solar-blind photodetectors fabricated by RF magnetron sputtering with combinatorial targets

被引：16

作者：

Jiang, Dayong ^{[1
]}

Tian, Chunguang ^{[1
]}

Yang, Guang ^{[2
]}

Qin, Jieming ^{[1
]}

Liang, Qingcheng ^{[1
]}

Zhao, Jianxun ^{[1
]}

Hou, Jianhua ^{[1
]}

Gao, Shang ^{[1
]}

机构：

[1] Changchun Univ Sci & Technol, Sch Mat Sci & Engn, Changchun 130022, Peoples R China

[2] Aviat Univ Air Force, Special Serv Dept, Changchun 130000, Peoples R China

来源：

MATERIALS RESEARCH BULLETIN | 2015年 / 67卷

基金：

中国国家自然科学基金;

关键词：

Thin films; Sputtering; Optical properties; ULTRAVIOLET PHOTODETECTORS; THIN-FILMS;

D O I：

10.1016/j.materresbull.2015.03.025

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

MgxZn1-xO films have been grown by radio frequency (RF) magnetron sputtering technique with combinatorial targets, and the solar-blind photodetectors based on the films have been fabricated. As a representative, the solar-blind photodetector based on Mg0.45Zn0.55O film exhibits an ultra-high responsivity of 031 A/W at 3 V bias, with a typical sharp cutoff wavelength at 284nm. The excellent responsivity characteristics make a contribution to a detectivity performance of 1.14 x 10(13) cm Hz(1/2)W(-1). Furthermore, the device also performs a very low dark current about 2.67 pA at 10 V bias. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：158 / 161

页数：4

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