Electronic properties of Si/Si-Ge Alloy/Si(100) heterostructures formed by ECR Ar plasma CVD without substrate heating

被引：3

作者：

Ueno, Naofumi ^{[1
]}

Sakuraba, Masao ^{[1
]}

Osakabe, Yoshihiro ^{[1
]}

Akima, Hisanao ^{[1
]}

Sato, Shigeo ^{[1
]}

机构：

[1] Tohoku Univ, Res Inst Elect Commun, Lab Nanoelect & Spintron, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2017年 / 70卷

基金：

日本学术振兴会;

关键词：

Plasma chemical vapor deposition; Heteroepitaxial growth; Silicon; Silicon-germanium alloy; Valence band; pn junction diode; CHEMICAL-VAPOR-DEPOSITION; FIELD-EFFECT TRANSISTORS; P-N-JUNCTIONS; B-DOPED SI; EPITAXIAL-GROWTH; INFRARED-SPECTROSCOPY; HYDROGEN TERMINATION; CRYSTALLINE SILICON; SELECTIVE CVD; GERMANIUM;

D O I：

10.1016/j.mssp.2016.09.035

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By using our low-energy Ar plasma enhanced chemical vapor deposition (CVD) at a substrate temperature below 100 degrees C during plasma exposure without substrate heating, modulation of valence band structures and infrared photoluminescence can be observed by change of strain in a Si/strained Si0.4Ge0.6/Si(100) heterostructure. For the strained Si0.5Ge0.5 film, Hall mobility at room temperature was confirmed to be as high as 660 cm(2) V-1 s(-1) with a carrier concentration of 1.3 x10(18) cm(-3) for n-type carrier, although the carrier origin was unclear. Moreover, good rectifying characteristics were obtained for a p(+)Si/nSi(0.5)Ge(0.5) heterojunction diode. This indicates that the strained Si-Ge alloy and Si films and their heterostructures epitaxially grown by our low energy Ar plasma enhanced CVD without substrate heating can be applicable effectively for various semiconductor devices utilizing high carrier mobility, built-in potential by doping and band engineering.

引用

页码：55 / 62

页数：8

共 57 条

[1] Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH4-B2H6-H2 gas mixture without substrate heating [J].