Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes

This letter reports on a low thermal impedance flip-chip packaged deep ultraviolet light-emitting diodes emitting at 280 nm featuring a finned heat sink. For a single 100 mu m x 100 mu m device flip-chip packaged onto an AlN submount and mounted on a TO-66 header with attached finned heat sink, a total junction to ambient thermal impedance as low as 33 degrees C/W was obtained. Numerical simulations of the heat transfer show that the excessive value of effective thermal impedance is mostly limited by insufficient junction area. (c) 2005 American Institute of Physics.