Ripple topography on thin ZnO films by grazing and oblique incidence ion sputtering

被引:10
作者
Bhattacharjee, S. [2 ]
Karmakar, P. [1 ]
Sinha, A. K. [2 ]
Charkrabarti, A. [1 ]
机构
[1] Ctr Variable Energy Cyclotron, Kolkata 700064, India
[2] UGC DAE CSR, Kolkata Ctr, Kolkata 700098, India
关键词
Sputtering; Ripple; Grazing incidence; ZnO; BOMBARDED SI(001); PATTERN-FORMATION; EVOLUTION; SURFACES; EROSION;
D O I
10.1016/j.apsusc.2011.02.123
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have investigated the formation and growth of nano sized ripple topography on ZnO thin films by 10 keV O1+ bombardment at impact angles of 80 degrees and 60 degrees, varying the ion fluence from 5 x 10(16) to 1 x 10(18) ions/cm(2). At 80 degrees the ripples are oriented along the ion beam direction whereas at 60 degrees it is perpendicular to the ion beam direction. The developed ion induced structures are characterized by atomic force microscopy (AFM) and the alignment, variation of rms roughness, wavelength and correlation length of the structures are discussed with the existing model and basic concept of ion surface interaction. (C) 2011 Elsevier B. V. All rights reserved.
引用
收藏
页码:6775 / 6778
页数:4
相关论文
共 24 条
[11]  
Karbacak T., 2001, PHYS REV B, V64
[12]   Nanoscale periodic and faceted structures formation on Si(100) by oblique angle oxygen ion sputtering [J].
Karmakar, P ;
Ghose, D .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 230 :539-544
[13]   Ion beam sputtering induced ripple formation in thin metal films [J].
Karmakar, P ;
Ghose, D .
SURFACE SCIENCE, 2004, 554 (2-3) :L101-L106
[14]   Sputtering-induced vacancy cluster formation on TiO2(110) [J].
Karmakar, P. ;
Liu, G. F. ;
Yarmoff, J. A. .
PHYSICAL REVIEW B, 2007, 76 (19)
[15]   Role of initial surface roughness on ion induced surface morphology [J].
Karmakar, P. ;
Mollick, S. A. ;
Ghose, D. ;
Chakrabarti, A. .
APPLIED PHYSICS LETTERS, 2008, 93 (10)
[16]   STOCHASTIC EFFECT IN GRAZING ION SURFACE SCATTERING [J].
KATO, M ;
KUROSE, T ;
INOUE, N ;
HASEGAWA, T ;
MATSUZAWA, K .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 67 (1-4) :316-319
[17]   Minimization of topological defects in ion-induced ripple patterns on silicon [J].
Keller, Adrian ;
Facsko, Stefan ;
Moeller, Wolfhard .
NEW JOURNAL OF PHYSICS, 2008, 10
[18]   Evolution of ion-induced ripple patterns on SiO2 surfaces [J].
Keller, Adrian ;
Facsko, Stefan ;
Moeller, Wolfhard .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 267 (04) :656-659
[19]   Formation of nanoripples in Al films during O2+ sputtering [J].
Mishra, P. ;
Ghose, D. .
PHYSICAL REVIEW B, 2006, 74 (15)
[20]   Formation and characterization of perpendicular mode Si ripples by glancing angle O2+ sputtering at room temperature [J].
Mollick, S. A. ;
Ghose, D. .
JOURNAL OF APPLIED PHYSICS, 2009, 106 (04)