Coupled effects of ion beam chemistry and morphology on directed self-assembly of epitaxial semiconductor nanostructures

被引：8

作者：

Graham, J. F. ^{[1
]}

Kell, C. D. ^{[1
]}

Floro, J. A. ^{[1
]}

Hull, R. ^{[2
]}

机构：

[1] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA

[2] Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA

来源：

NANOTECHNOLOGY | 2011年 / 22卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1088/0957-4484/22/7/075301

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We study the coupled effects of ion beam chemistry and morphology on the assembly of templated epitaxial nanostructures. Using a focused ion beam (FIB) system equipped with a mass-selecting filter, we pattern Si substrates with local ion doses of Si, Ge and Ga to control subsequent GexSi1-x epitaxial nanostructure assembly. This capability to employ different templating species allows us to study how different incorporated ion species in the near surface region affect the ability to localize nucleation during subsequent epitaxial growth. Our results indicate that FIB-directed self-assembly is a complex process, dependent on dose-induced morphology in addition to ion-specific chemical effects.

引用

页数：5

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