Short-wave infrared InGaAs photodetectors and focal plane arrays

被引：23
作者：
Zhang, Yong-Gang [1 ,2 ]
Gu, Yi [1 ,2 ]
Shao, Xiu-Mei [1 ]
Li, Xue [1 ]
Gong, Hai-Mei [1 ]
Fang, Jia-Xiong [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
来源：
CHINESE PHYSICS B | 2018年 / 27卷 / 12期
基金：
中国国家自然科学基金;
关键词：
InGaAs; short-wave infrared; photodetectors; focal plane arrays; GAAS-BASED IN0.83GA0.17AS; MATCHED EPITAXIAL-FILMS; PERFORMANCE; GROWTH; PHOTODIODES; GAXIN1-XAS-INP; OPTIMIZATION; TEMPERATURE; UNIFORMITY; LEAKAGE;
D O I：
10.1088/1674-1056/27/12/128102
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this article, unique spectral features of short-wave infrared band of 1 mu m(-3) mu m, and various applications related to the photodetectors and focal plane arrays in this band, are introduced briefly. In addition, the different material systems for the devices in this band are outlined. Based on the background, the development of lattice-matched and wavelengthextended InGaAs photodetectors and focal plane arrays, including our continuous efforts in this field, are reviewed. These devices are concentrated on the applications in spectral sensing and imaging, exclusive of optical fiber communication.
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页数：7
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