Effect of indium surface segregation on excitonic properties in (111)B-grown (In,Ga)As/GaAs multiple quantum wells

被引：1

作者：

Ballet, P ^{[1
]}

Disseix, P

Leymarie, J

Vasson, A

Vasson, AM

Grey, R

机构：

[1] Univ Blaise Pascal, LASMEA, UMR CNRS 6602, F-63177 Aubiere, France

[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 4DU, S Yorkshire, England

来源：

MICROELECTRONIC ENGINEERING | 1998年 / 43-4卷

关键词：

surface segregation; oscillator strength; (111)B-grown heterostructure; piezoelectric field; optical spectroscopy;

D O I：

10.1016/S0167-9317(98)00165-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two (111)B In0.15Ga0.85As/GaAs multiple quantum well p-i-n diodes, grown by molecular beam epitaxy, are investigated by thermally-detected optical absorption and electroreflectance. The excitonic properties are calculated by taking into account the contribution of indium segregation. An equilibrium model is used to provide the composition profiles. It is shown that indium segregation influences the piezoelectric field determination and the oscillator strengths of the excitonic transitions. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：205 / 212

页数：8

共 6 条

[1] Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells [J].