Dimer elongation on the monohydride-covered Ge/Si(100) surface

被引:3
|
作者
Bailes, AA [1 ]
Boshart, MA [1 ]
Seiberling, LE [1 ]
机构
[1] Univ Florida, Dept Phys, Gainesville, FL 32611 USA
基金
美国国家科学基金会;
关键词
adatoms; epitaxy; high-energy ion scattering (HEIS); ion-solid interactions; scattering; channeling; semiconducting surfaces; single crystal epitaxy; surface structure;
D O I
10.1016/S0039-6028(98)00405-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using transmission ion channeling, we have made the first measurement of the Ge dimer geometry for the monohydride-covered Ge/Si(100)-2 x 1 surface. Comparison of calculated angular scans with experimental angular scans near the [100] and [110] directions has resulted in a measured Ge dimer bond length of 2.8 Angstrom, which is 8% longer than the corresponding dimer bond length reported for Ge on Si(100) in the absence of H. This elongation is similar to that reported for Si dimers on the Si(100) surface. Also, relative to the (100) surface plane, the dimers change from tilted without H to untilted with H. (C) 1998 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码:L762 / L767
页数:6
相关论文
共 50 条
  • [31] Kinetic frustration of Ostwald ripening in Ge/Si(100) hut ensembles
    McKay, Michael R.
    Venables, J. A.
    Drucker, Jeff
    SOLID STATE COMMUNICATIONS, 2009, 149 (35-36) : 1403 - 1409
  • [32] Adsorption of Mn atoms on the Si(100) surface
    Dalpian, GM
    da Silva, AJR
    Fazzio, A
    SURFACE SCIENCE, 2004, 566 : 688 - 692
  • [33] Direct measurement of surface stress during Bi-mediated Ge growth on Si
    Asaoka, Hidehito
    Yamazaki, Tatsuya
    Yamaguchi, Kenji
    Shamoto, Shin-ichi
    Filimonov, Sergey
    Suemitsu, Maki
    SURFACE SCIENCE, 2013, 609 : 157 - 160
  • [34] Surface morphologies of Br-etched Ge/Si(001)
    Chey, SJ
    Gong, Y
    Weaver, JH
    SURFACE SCIENCE, 1998, 409 (03) : 421 - 427
  • [35] Effect of adsorbed Sn on Ge diffusivity on Si(111) surface
    Dolbak, Andrey E.
    Olshanetsky, Boris Z.
    CENTRAL EUROPEAN JOURNAL OF PHYSICS, 2008, 6 (03): : 634 - 637
  • [36] Effect of nanoimprinted surface relief on Si and Ge nucleation and ordering
    Kamins, T. I.
    Yasseri, A. A.
    Sharma, S.
    Pease, R. F. W.
    Xia, Q.
    Chou, S. Y.
    MICROELECTRONICS JOURNAL, 2006, 37 (12) : 1481 - 1485
  • [37] The surface morphology of Si (100) after carbon deposition
    Butz, R
    Luth, H
    SURFACE SCIENCE, 1998, 411 (1-2) : 61 - 69
  • [38] Adsorption and desorption processes of Cl on a Si(100) surface
    Nakatsuji, K
    Matsuda, K
    Yonezawa, T
    Daimon, H
    Suga, S
    SURFACE SCIENCE, 1996, 363 (1-3) : 321 - 325
  • [39] Oxidation of hydrogen terminated Ge(100) surface in the presence of iodine in methanol
    Lee, Younghwan
    Park, Kibyung
    Lim, Sangwoo
    APPLIED SURFACE SCIENCE, 2008, 255 (05) : 3318 - 3321
  • [40] Plasma nitridation of Ge(100) surface studied by scanning tunneling microscopy
    Lee, Joon Sung
    Bishop, Sarah R.
    Grassman, Tyler J.
    Kummel, Andrew C.
    SURFACE SCIENCE, 2010, 604 (15-16) : 1239 - 1246