Dimer elongation on the monohydride-covered Ge/Si(100) surface

被引:3
|
作者
Bailes, AA [1 ]
Boshart, MA [1 ]
Seiberling, LE [1 ]
机构
[1] Univ Florida, Dept Phys, Gainesville, FL 32611 USA
基金
美国国家科学基金会;
关键词
adatoms; epitaxy; high-energy ion scattering (HEIS); ion-solid interactions; scattering; channeling; semiconducting surfaces; single crystal epitaxy; surface structure;
D O I
10.1016/S0039-6028(98)00405-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using transmission ion channeling, we have made the first measurement of the Ge dimer geometry for the monohydride-covered Ge/Si(100)-2 x 1 surface. Comparison of calculated angular scans with experimental angular scans near the [100] and [110] directions has resulted in a measured Ge dimer bond length of 2.8 Angstrom, which is 8% longer than the corresponding dimer bond length reported for Ge on Si(100) in the absence of H. This elongation is similar to that reported for Si dimers on the Si(100) surface. Also, relative to the (100) surface plane, the dimers change from tilted without H to untilted with H. (C) 1998 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码:L762 / L767
页数:6
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