Size-dependent photoluminescence from surface-oxidized Si nanocrystals in a weak confinement regime

被引:315
作者
Takeoka, S
Fujii, M [1 ]
Hayashi, S
机构
[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan
[2] Kobe Univ, Grad Sch Sci & Technol, Div Math & Mat Sci, Kobe, Hyogo 6578501, Japan
关键词
D O I
10.1103/PhysRevB.62.16820
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Photoluminescence (PL) from surface-oxidized Si nanocrystals (nc-Si) was studied as a function of the size. The size of nc-Si was comparable with or larger than the Bohr radius of free excitons in bulk Si crystal (5 nm). In contrast to smaller surface-oxidized nc-Si (typically as small as a few nanometers in diameter), these relatively large nc-Si exhibited PL properties with strong size dependence. A high-energy shift of the PL peak from the vicinity of the bulk band gap to the visible region was observed. This PL shift was accompanied by a shortening of the PL lifetime and an increase in the exchange splitting energy of excitons. These size dependences indicate that the PL originates from the recombination of excitons confined in nc-Si. The differences in the PL properties between H-terminated and surface-oxidized nc-Si are also discussed.
引用
收藏
页码:16820 / 16825
页数:6
相关论文
共 31 条
  • [1] THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION
    BRANDT, MS
    FUCHS, HD
    STUTZMANN, M
    WEBER, J
    CARDONA, M
    [J]. SOLID STATE COMMUNICATIONS, 1992, 81 (04) : 307 - 312
  • [2] IDENTIFICATION OF RADIATIVE TRANSITIONS IN HIGHLY POROUS SILICON
    CALCOTT, PDJ
    NASH, KJ
    CANHAM, LT
    KANE, MJ
    BRUMHEAD, D
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (07) : L91 - L98
  • [3] SPECTROSCOPIC IDENTIFICATION OF THE LUMINESCENCE MECHANISM OF HIGHLY POROUS SILICON
    CALCOTT, PDJ
    NASH, KJ
    CANHAM, LT
    KANE, MJ
    BRUMHEAD, D
    [J]. JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) : 257 - 269
  • [4] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
    CANHAM, LT
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
  • [5] Porous silicon: From luminescence to LEDs
    Collins, RT
    Fauchet, PM
    Tischler, MA
    [J]. PHYSICS TODAY, 1997, 50 (01) : 24 - 31
  • [6] The structural and luminescence properties of porous silicon
    Cullis, AG
    Canham, LT
    Calcott, PDJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) : 909 - 965
  • [7] Fujii M, 1998, RRD APPL PHYS, V1, P193
  • [8] Photoluminescence from Si nanocrystals dispersed in phosphosilicate glass thin films: Improvement of photoluminescence efficiency
    Fujii, M
    Mimura, A
    Hayashi, S
    Yamamoto, K
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (02) : 184 - 186
  • [9] Improvement in photoluminescence efficiency of SiO2 films containing Si nanocrystals by P doping:: An electron spin resonance study
    Fujii, M
    Mimura, A
    Hayashi, S
    Yamamoto, K
    Urakawa, C
    Ohta, H
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (04) : 1855 - 1857
  • [10] Characterization of Si nanocrystals grown by annealing SiO2 films with uniform concentrations of implanted Si
    Guha, S
    Qadri, SB
    Musket, RG
    Wall, MA
    Shimizu-Iwayama, T
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 88 (07) : 3954 - 3961