Characterization of InGaN by Means of I-V Measurements of Respective Light-Emitting Diode (LED) by DLTS

被引：6
作者：
Asghar, H. M. Noor ul Huda Khan [1 ,4 ,5 ]
Gilani, Zaheer Abbas [1 ]
Awan, M. S. [2 ]
Ahmad, I. [3 ]
Tan, Yi [4 ,5 ]
机构：
[1] Balochistan Univ Informat Technol, Dept Phys Engn & Management Sci BUITEMS, Quetta, Pakistan
[2] ISIT, Islamabad, Pakistan
[3] Govt Tech Training Inst, Multan, Pakistan
[4] Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China
[5] Key Lab Solar Energy Photo Volta Syst Liaoning Pr, Dalian 116024, Peoples R China
来源：
ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING | 2015年 / 40卷 / 01期
关键词：
Semiconducting indium gallium nitride materials; I-V characteristics; Deep-level transient spectroscopy ( DLTS) of the material; Light-emitting diode; LASER-DIODES; GAN; DEGRADATION;
D O I：
10.1007/s13369-014-1483-y
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Indium gallium nitride (InGaN) has been characterized by means of deep-level transient spectroscopy (DLTS). The current-voltage measurement of respective schottky diode is performed by standard method available in our DLTS setup. The current-voltage measurement of InGaN is performed at various temperatures under same biasing conditions. From these measurements, the behavior of the materials is studied in detailed and listed in the following: The ideality factor, calculated to be 8.839, is found to increase with decreasing temperature of the material. However, values increased with decrease in temperature for the material. The higher value of ideality factor is attributed to high diffusion or tunneling current. The barrier height of InGaN is calculated as 0.851 eV which decreased with decrease in temperature. The change in the barrier height is related to the effective leakage current at high temperature. In InGaN, the value of reverse saturation current at room temperature is calculated as 8.22 x 10(-11) A, and the calculated values are found to decrease at lower temperatures.
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页码：263 / 268
页数：6
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