Room temperature photoluminescence from erbium-doped silica thin films prepared by cosputtering

被引：7
作者：
Gu, G [1 ]
Du, YW
Yu, T
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
[3] Nanjing Univ, Dept Chem, Nanjing 210093, Peoples R China
来源：
THIN SOLID FILMS | 1998年 / 315卷 / 1-2期
关键词：
luminescence; silicon oxide; sputtering; Raman scattering;
D O I：
10.1016/S0040-6090(97)00789-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Er3+ ions were dispersed in silica matrix by rf magnetron cosputtering of silica and erbium oxide. Photoluminescence of Er3+ centered at 1.534 mu m has been detected at room temperature as excited by a Nd-YAG laser line at 1.064 mu m. The photoluminescence intensity is proportional to the annealing temperature. We believe that it is due to more radiative centers reaching Er3+ upon annealing. Besides the main peak at 1.534 mu m, an additional peak at 1.522 mu m was observed, which is considered to result from the Raman response of surface hydrogen bonds. (C) 1998 Elsevier Science S.A.
引用
收藏
页码：263 / 265
页数：3
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