Effect of Temperature Gradient Direction in the Catalyst Nanoparticle on CNTs Growth Mode

被引:7
作者
Lo, An-Ya [3 ]
Liu, Shang-Bin [2 ]
Kuo, Cheng-Tzu [1 ]
机构
[1] Ming Dao Univ, Dept Mat Sci & Engn, Changhua 52345, Taiwan
[2] Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan
[3] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
来源
NANOSCALE RESEARCH LETTERS | 2010年 / 5卷 / 09期
关键词
CNTs; Growth mechanism; Base-growth; Tip-growth; CVD; ALIGNED CARBON NANOTUBES; FIELD-EMISSION; ELECTRONIC-STRUCTURE; TIP-GROWTH; MECHANISM; NUCLEATION; RESOLUTION; ARRAYS; NANOSTRUCTURES; TRANSITION;
D O I
10.1007/s11671-010-9648-4
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
To improve the understanding on CNT growth modes, the various processes, including thermal CVD, MP-CVD and ECR-CVD, have been used to deposit CNTs on nanoporous SBA-15 and Si wafer substrates with C2H2 and H-2 as reaction gases. The experiments to vary process parameter of Delta T, defined as the vector quantities of temperature at catalyst top minus it at catalyst bottom, were carried out to demonstrate its effect on the CNT growth mode. The TEM and TGA analyses were used to characterize their growth modes and carbon yields of the processes. The results show that Delta T can be used to monitor the temperature gradient direction across the catalyst nanoparticle during the growth stage of CNTs. The results also indicate that the tip-growth CNTs, base-growth CNTs and onion-like carbon are generally fabricated under conditions of Delta T > 0, < 0 and similar to 0, respectively. Our proposed growth mechanisms can be successfully adopted to explain why the base- and tip-growth CNTs are common in thermal CVD and plasma-enhanced CVD processes, respectively. Furthermore, our experiments have also successfully demonstrated the possibility to vary Delta T to obtain the desired growth mode of CNTs by thermal or plasma-enhanced CVD systems for different applications.
引用
收藏
页码:1393 / 1402
页数:10
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