Wafer bonding for integrated materials

被引:25
作者
Tong, QY
机构
[1] Res Triangle Inst, Wafer Bonding Lab, Res Triangle Pk, NC 27709 USA
[2] Ziptronix, Res Triangle Pk, NC 27709 USA
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 87卷 / 03期
关键词
hetero-epitaxial; wafer bonding; surface smoothness;
D O I
10.1016/S0921-5107(01)00731-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Wafer bonding and layer transfer technology has emerged as one of the fundamental technologies for the fabrication of integrated materials. In this paper, we will first discuss the basics and the generic nature of the wafer direct bonding process in terms of inter-molecular forces, surface mechanics and chemistry, interface reactions and bonding procedures. Based on the understanding of wafer bonding process, innovative low temperature wafer bonding technologies that operate at wafer level in ambient conditions have been developed to facilitate the integration of almost any materials that are similar or dissimilar. Room temperature chemical bonding and low temperature epitaxial or hetero-epitaxial-like bonding approaches are introduced. Finally, examples of integrated materials prepared by wafer bonding and layer transfer are presented. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:323 / 328
页数:6
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