Theoretical analysis of effects of deep level, back contact, and absorber thickness on capacitance-voltage profiling of CdTe thin-film solar cells

被引：66

作者：

Li, Jian V. ^{[1
]}

Halverson, Adam F. ^{[2
]}

Sulima, Oleg V. ^{[2
]}

Bansal, Shubhra ^{[3
]}

Burst, James M. ^{[1
]}

Barnes, Teresa M. ^{[1
]}

Gessert, Timothy A. ^{[1
]}

Levi, Dean H. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] GE Global Res, Niskayuna, NY 12309 USA

[3] US DOE, Washington, DC 20585 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2012年 / 100卷

关键词：

Capacitance-voltage; CdTe; Absorber thickness; Back contact; Deep level;

D O I：

10.1016/j.solmat.2012.01.003

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The apparent carrier density profile measured by the capacitance-voltage technique in CdTe thin-film solar cells frequently displays a distinctive U-shape. We show that, even assuming a uniform carrier density, such a U-shape may arise from deep levels, a non-ohmic back-contact, and a thin absorber, which are commonly present in practical CdTe thin-film solar cells. A thin CdTe absorber contributes to the right branch of the U-shape due to a punch-through effect at reverse or zero biases, when the CdTe absorber is nearly fully depleted. A rectifying back-contact contributes to both branches of the U-shape due to voltage sharing with the front junction under a forward bias and early punch-through under a reverse bias. Deep levels contribute to the right branch, but also raise the bottom of the U-shape, leading to an overestimate of carrier density. (C) 2012 Elsevier By. All rights reserved.

引用

页码：126 / 131

页数：6

共 9 条

[1]

[Anonymous], P 2 WORLD C PHOT EN

[2] Interpretation of admittance, capacitance-voltage, and current-voltage signatures in Cu(In,Ga)Se2 thin film solar cells [J].