Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing

被引：23
作者：
Kang, Min Gyu [1 ,2 ]
Cho, Kwang Hwan [1 ]
Oh, Seung Min [1 ]
Do, Young Ho [1 ]
Kang, Chong Yun [1 ]
Kim, Sangsig [2 ]
Yoon, Seok Jin [1 ]
机构：
[1] Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South Korea
[2] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea
来源：
CURRENT APPLIED PHYSICS | 2011年 / 11卷 / 03期
关键词：
BST; Thin film; Excimer laser annealing; Embedded capacitor; System-on-package; Sol-gel; SYSTEM; RF; PERFORMANCE; CAPACITORS; DEPENDENCE; SOP; DC;
D O I：
10.1016/j.cap.2010.12.029
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
(Ba,Sr)TiO3 (BST) thin film with a perovskite structure has a potential for the practical applications in various functional devices. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below 700 degrees C. For the purpose of integrating BST thin film directly into system-on-package (SoP), it is necessary to process the BST film below 350 degrees C. The electrical properties of low-temperature crystallized BST film were studied in this paper. The BST thin films have been crystallized at 300 degrees C by excimer laser annealing (ELA). The BST films were exhibited in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss and low leakage current density. As a result, we demonstrated crystallized BST thin film which has permittivity of 143, dielectric loss of 0.028 and leakage current density of 0.9 mu A/cm(2) below 300 degrees C. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：S66 / S69
页数：4
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