Electronic interaction and bipolar resistive switching in copper oxide-multilayer graphene hybrid interface: Graphene as an oxygen ion storage and blocking layer

被引：20

作者：

Singh, Bharti ^{[1
]}

Mehta, B. R. ^{[1
]}

Govind ^{[2
]}

Feng, X. ^{[3
]}

Muellen, Klaus ^{[3
]}

机构：

[1] Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India

[2] Natl Phys Lab CSIR, Surface Phys Grp, New Delhi 110012, India

[3] Max Planck Inst Polymer Res, D-55128 Mainz, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 22期

关键词：

bipolar transistor switches; copper compounds; graphene; hybrid integrated circuits; rectifying circuits;

D O I：

10.1063/1.3663971

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This study reports a bipolar resistive switching device based on copper oxide (CuO)-multilayer graphene (MLG) hybrid interface in complete contrast to the ohmic and rectifying characteristics of junctions based on individual MLG and CuO layers. The observed shift and the occurrence of additional O1s, Cu2p, and C1s core level peaks indicate electronic interaction at the hybrid interfacial layer. Large changes in the resistive switching parameters on changing the ambient conditions from air to vacuum establish the important role of MLG as oxygen ion storage and blocking layer towards the observed resistive switching effect. (C) 2011 American Institute of Physics. [doi:10.1063/1.3663971]

引用

页数：3

共 13 条

[1] Nanoparticle route for the synthesis of a stable and stoichiometric Cu2C2 phase -: a semiconductor material [J].

Balamurugan, B ;

Mehta, BR ;

Shivaprasad, SM .

APPLIED PHYSICS LETTERS, 2003, 82 (01) :115-117

[2] Unipolar resistive switching mechanism speculated from irreversible low resistance state of Cu2O films [J].

Hong, Sahwan ;

Long, Deng Xiao ;

Hwang, Inrok ;

Kim, Jin-Soo ;

Park, Yun Chang ;

Kang, Sung-Oong ;

Park, Bae Ho .

APPLIED PHYSICS LETTERS, 2011, 99 (05)

[3] PREPARATION OF GRAPHITIC OXIDE [J].

HUMMERS, WS ;

OFFEMAN, RE .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1958, 80 (06) :1339-1339

[4] Electronics using hybrid-molecular and mono-molecular devices [J].

Joachim, C ;

Gimzewski, JK ;

Aviram, A .

NATURE, 2000, 408 (6812) :541-548

[5] Electrode influence on the transport through SrRuO3/Cr-doped SrZrO3/metal junctions [J].

Lee, Hwan-Soo ;

Bain, James A. ;

Choi, Sukwon ;

Salvador, Paul A. .

APPLIED PHYSICS LETTERS, 2007, 90 (20)

[6] Resistive switching in transition metal oxides [J].

Sawa, Akihito .

MATERIALS TODAY, 2008, 11 (06) :28-36

[7] Ambipolar bistable switching effect of graphene [J].

Shin, Young Jun ;

Kwon, Jae Hyun ;

Kalon, Gopinadhan ;

Lam, Kai-Tak ;

Bhatia, Charanjit S. ;

Liang, Gengchiau ;

Yang, Hyunsoo .

APPLIED PHYSICS LETTERS, 2010, 97 (26)

[8] Structural and electronic interaction at CuO-hexa-peri-hexabenzocoronene hybrid interface [J].

Singh, Bharti ;

Mehta, B. R. ;

Singh, M. ;

Gupta, Govind ;

Doessel, L. ;

Feng, X. ;

Muellen, K. .

APPLIED PHYSICS LETTERS, 2011, 98 (07)

[9] Investigation of oxygen states and reactivities on a nanostructured cupric oxide surface [J].

Svintsitskiy, D. A. ;

Stadnichenko, A. I. ;

Demidov, D. V. ;

Koscheev, S. V. ;

Boronin, A. I. .

APPLIED SURFACE SCIENCE, 2011, 257 (20) :8542-8549

[10]

Sze S.M., 1985, SEMICONDUCTOR DEVICE

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