Symmetry-Controlled Reversible Photovoltaic Current Flow in Ultrathin All 2D Vertically Stacked Graphene/MoS2/WS2/Graphene Devices

被引:34
作者
Zhou, Yingqiu [1 ]
Xu, Wenshuo [1 ]
Sheng, Yuewen [1 ]
Huang, Hefu [1 ]
Zhang, Qianyang [1 ]
Hou, Linlin [1 ]
Shautsova, Viktoryia [1 ]
Warner, Jamie H. [1 ]
机构
[1] Univ Oxford, Dept Mat, Parks Rd, Oxford OX1 3PH, England
基金
欧洲研究理事会;
关键词
photovoltaic; WS2; MoS2; vertical 2D heterostructures; optoelectronics; ATOMIC LAYERS; GAS SENSOR; GRAPHENE; MONOLAYER; MOS2; WS2; HETEROSTRUCTURES; ABSORPTION; ELECTRONICS;
D O I
10.1021/acsami.8b16790
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Atomically thin vertical heterostructures are promising candidates for optoelectronic applications, especially for flexible and transparent technologies. Here, we show how ultrathin all two-dimensional vertical-stacked type-II heterostructure devices can be assembled using only materials grown by chemical vapor deposition, with graphene (Gr) as top and bottom electrodes and MoS2/WS2 as the active semiconductor layers in the middle. Furthermore, we show that the stack symmetry, which dictates the type-II directionality, is the dominant factor in controlling the photocurrent direction upon light irradiation, whereas in homobilayers, photocurrent direction cannot be easily controlled because the tunnel barrier is determined by the doping levels of the graphene, which appears fixed for top and bottom graphene layers due to their dielectric environments. Therefore, the ability to direct photovoltaic current flow is demonstrated to be only possible using heterobilayers (HBs) and not homobilayers. We study the photovoltaic effects in more than 40 devices, which allows for statistical verification of performance and comparative behavior. The photovoltage in the graphene/transition-metal dichalcogenide-heterobilayer/graphene (Gr/TMD-HB (MoS2/WS2)/Gr) increases up to 10 times that generated in the monolayer TMD devices under the same optical illumination power, due to efficient charge transfer between WS2 and MoS2 and extraction to graphene electrodes. By applying external gate voltages (V-g), the band alignment can be tuned, which in turn controls the photovoltaic effect in the vertical heterostructures. The tunneling-assisted interlayer charge recombination also plays a significant role in modulating the photovoltaic effect in the Gr/TMD-HB/Gr. These results provide important insights into how layer symmetry in vertical stacked graphene/TMD/graphene ultrathin optoelectronics can be used to control electron flow directions during photoexcitation and open up opportunities for tandem cell assembly.
引用
收藏
页码:2234 / 2242
页数:9
相关论文
共 44 条
  • [1] Two-dimensional flexible nanoelectronics
    Akinwande, Deji
    Petrone, Nicholas
    Hone, James
    [J]. NATURE COMMUNICATIONS, 2014, 5
  • [2] Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition
    Amani, Matin
    Chin, Matthew L.
    Birdwell, A. Glen
    O'Regan, Terrance P.
    Najmaei, Sina
    Liu, Zheng
    Ajayan, Pulickel M.
    Lou, Jun
    Dubey, Madan
    [J]. APPLIED PHYSICS LETTERS, 2013, 102 (19)
  • [3] Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials
    Bernardi, Marco
    Palummo, Maurizia
    Grossman, Jeffrey C.
    [J]. NANO LETTERS, 2013, 13 (08) : 3664 - 3670
  • [4] Theoretical prediction of fracture conditions for delithiation in silicon anode of lithium ion battery
    Cho, Yong-Hee
    Booh, Seongwoon
    Cho, Eunseog
    Lee, Hyosug
    Shin, Jaikwang
    [J]. APL MATERIALS, 2017, 5 (10):
  • [5] High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
    Chuang, Hsun-Jen
    Tan, Xuebin
    Ghimire, Nirmal Jeevi
    Perera, Meeghage Madusanka
    Chamlagain, Bhim
    Cheng, Mark Ming-Cheng
    Yan, Jiaqiang
    Mandrus, David
    Tomanek, David
    Zhou, Zhixian
    [J]. NANO LETTERS, 2014, 14 (06) : 3594 - 3601
  • [6] Synthesis and Optical Properties of Large-Area Single-Crystalline 2D Semiconductor WS2 Monolayer from Chemical Vapor Deposition
    Cong, Chunxiao
    Shang, Jingzhi
    Wu, Xing
    Cao, Bingchen
    Peimyoo, Namphung
    Qiu, Caiyu
    Sun, Litao
    Yu, Ting
    [J]. ADVANCED OPTICAL MATERIALS, 2014, 2 (02): : 131 - 136
  • [7] Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
    Fontana, Marcio
    Deppe, Tristan
    Boyd, Anthony K.
    Rinzan, Mohamed
    Liu, Amy Y.
    Paranjape, Makarand
    Barbara, Paola
    [J]. SCIENTIFIC REPORTS, 2013, 3
  • [8] Furchi MM, 2014, NANO LETT, V14, P6165, DOI [10.1021/n1502339q, 10.1021/nl502339q]
  • [9] Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction
    Furchi, Marco M.
    Pospischil, Andreas
    Libisch, Florian
    Burgdoerfer, Joachim
    Mueller, Thomas
    [J]. NANO LETTERS, 2014, 14 (08) : 4785 - 4791
  • [10] Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
    Gong, Cheng
    Zhang, Hengji
    Wang, Weihua
    Colombo, Luigi
    Wallace, Robert M.
    Cho, Kyeongjae
    [J]. APPLIED PHYSICS LETTERS, 2013, 103 (05)