Formation of 90° elastic domains during local 180° switching in epitaxial ferroelectric thin films

被引:53
作者
Chen, L [1 ]
Ouyang, J [1 ]
Ganpule, CS [1 ]
Nagarajan, V [1 ]
Ramesh, R [1 ]
Roytburd, AL [1 ]
机构
[1] Univ Maryland, Dept Mat Sci & Engn, Mat Res Sci & Engn Ctr, College Pk, MD 20742 USA
关键词
D O I
10.1063/1.1633970
中图分类号
O59 [应用物理学];
学科分类号
摘要
90degrees elastic domains were observed after local polings in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films via piezoresponse force microscopy. An area of internal stress arises under a conductive atomic force microscope tip due to the opposite signs of the converse piezoelectric effects in the switched domain and the unswitched films surrounding. The formation of 90degrees domains leads to the relaxation of the internal stress and stabilization of 180degrees domain after turning off the electric field applied by the tip. The criterion that formulates the necessary condition for realization of the relaxation mechanism is presented as well. (C) 2004 American Institute of Physics.
引用
收藏
页码:254 / 256
页数:3
相关论文
共 15 条
[1]   Local, nonvolatile electronic writing of epitaxial Pb(Zr0.52Ti0.48)O-3/SrRuO3 heterostructures [J].
Ahn, CH ;
Tybell, T ;
Antognazza, L ;
Char, K ;
Hammond, RH ;
Beasley, MR ;
Fischer, O ;
Triscone, JM .
SCIENCE, 1997, 276 (5315) :1100-1103
[2]   Thermodynamics of polydomain heterostructures. III. Domain stability map [J].
Alpay, SP ;
Roytburd, AL .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (09) :4714-4723
[3]   DOMAIN CLAMPING EFFECT IN BARIUM TITANATE SINGLE CRYSTALS [J].
DROUGARD, ME ;
YOUNG, DR .
PHYSICAL REVIEW, 1954, 94 (06) :1561-1564
[4]   Probing domains at the nanometer scale in piezoelectric thin films [J].
Durkan, C ;
Welland, ME ;
Chu, DP ;
Migliorato, P .
PHYSICAL REVIEW B, 1999, 60 (23) :16198-16204
[5]   Polarization relaxation kinetics and 180° domain wall dynamics in ferroelectric thin films -: art. no. 014101 [J].
Ganpule, CS ;
Roytburd, AL ;
Nagarajan, V ;
Hill, BK ;
Ogale, SB ;
Williams, ED ;
Ramesh, R ;
Scott, JF .
PHYSICAL REVIEW B, 2002, 65 (01) :1-7
[6]  
GANPULE CS, 2000, APPL PHYS LETT, V77, P272
[7]   Spatial inhomogeneity of imprint and switching behavior in ferroelectric capacitors [J].
Gruverman, A ;
Rodriguez, BJ ;
Kingon, AI ;
Nemanich, RJ ;
Cross, JS ;
Tsukada, M .
APPLIED PHYSICS LETTERS, 2003, 82 (18) :3071-3073
[8]   Nanoscale imaging of domain dynamics and retention in ferroelectric thin films [J].
Gruverman, A ;
Tokumoto, H ;
Prakash, AS ;
Aggarwal, S ;
Yang, B ;
Wuttig, M ;
Ramesh, R ;
Auciello, O ;
Venkatesan, T .
APPLIED PHYSICS LETTERS, 1997, 71 (24) :3492-3494
[9]   Asymmetric nanoscale switching in ferroelectric thin films by scanning force microscopy [J].
Gruverman, A ;
Kholkin, A ;
Kingon, A ;
Tokumoto, H .
APPLIED PHYSICS LETTERS, 2001, 78 (18) :2751-2753
[10]   Imaging mechanism of piezoresponse force microscopy of ferroelectric surfaces [J].
Kalinin, SV ;
Bonnell, DA .
PHYSICAL REVIEW B, 2002, 65 (12) :1-11