Low Sheet Resistivity of Transparent Ga-Doped ZnO Film Grown by Atmospheric Spray Pyrolysis

被引：11
作者：
Takemoto, Yujin [1 ]
Oshima, Minoru [1 ]
Yoshino, Kenji [1 ]
Toyota, Kouji [2 ]
Inaba, Koichiro [2 ]
Haga, Ken-ichi [2 ]
Tokudome, Koichi [2 ]
机构：
[1] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan
[2] Tosoh Finechem Corp, Res & Dev Div, Yamaguchi 7460006, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 08期
关键词：
CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; TEMPERATURE;
D O I：
10.1143/JJAP.50.088001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ga-doped ZnO film on polyethylene terephthalate film was successfully grown at 150 degrees C by conventional atmospheric spray pyrolysis using diethylzinc-based solution. The samples had an average optical transmittance of more than 80% and were strongly a-axis orientated according to the result of optical transmittance and X-ray diffraction analyses, respectively. The n-type Ga-doped ZnO films had a low sheet resistivity of 250 Omega/square at an optimal Ga content of 1 at.% upon UV irradiation. (C) 2011 The Japan Society of Applied Physics
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页数：2
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