Low Sheet Resistivity of Transparent Ga-Doped ZnO Film Grown by Atmospheric Spray Pyrolysis

被引：11

作者：

Takemoto, Yujin ^{[1
]}

Oshima, Minoru ^{[1
]}

Yoshino, Kenji ^{[1
]}

Toyota, Kouji ^{[2
]}

Inaba, Koichiro ^{[2
]}

Haga, Ken-ichi ^{[2
]}

Tokudome, Koichi ^{[2
]}

机构：

[1] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan

[2] Tosoh Finechem Corp, Res & Dev Div, Yamaguchi 7460006, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 08期

关键词：

CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; TEMPERATURE;

D O I：

10.1143/JJAP.50.088001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ga-doped ZnO film on polyethylene terephthalate film was successfully grown at 150 degrees C by conventional atmospheric spray pyrolysis using diethylzinc-based solution. The samples had an average optical transmittance of more than 80% and were strongly a-axis orientated according to the result of optical transmittance and X-ray diffraction analyses, respectively. The n-type Ga-doped ZnO films had a low sheet resistivity of 250 Omega/square at an optimal Ga content of 1 at.% upon UV irradiation. (C) 2011 The Japan Society of Applied Physics

引用

页数：2

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