Aqueous Solution-Processed Boron-Doped Gallium Oxide Dielectrics for High-Performance Thin-Film Transistors

被引：20

作者：

Xu, Wangying ^{[1
]}

Chen, Lin ^{[1
]}

Han, Shun ^{[1
]}

Cao, Peijiang ^{[1
]}

Fang, Ming ^{[1
]}

Liu, Wenjun ^{[1
]}

Zhu, Deliang ^{[1
]}

Lu, Youming ^{[1
]}

机构：

[1] Shenzhen Univ, Guangdong Res Ctr Inteifacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat, Coll Mat Sci & Engn, Shenzhen 518060, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2020年 / 124卷 / 14期

基金：

中国国家自然科学基金;

关键词：

LOW-TEMPERATURE; ELECTRICAL PERFORMANCE; LOW-VOLTAGE; LAYER; DEPOSITION; GROWTH;

D O I：

10.1021/acs.jpcc.0c01281

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, we report aqueous solution-processed boron-doped gallium oxide dielectric thin films for high-performance oxide thin-film transistors. The role of B incorporation on the microstructural, chemical, optical, and dielectric characteristics of Ga2O3 is comprehensively investigated. The combined results show that suitable B addition could effectively suppress oxygen vacancy related defects and densify the Ga2O3 film, thereby effectively reducing the leakage current and enhancing the dielectric properties of Ga2O3. Compared with pristine Ga2O3-gated TFTs, the In2O3/GaBO (10 at% B) TFTs have a significant improvement in devices performance, including the mobility increasing from 10 to 17 cm(2)/(V s) and the on-off current ratio improving from 2.5 X 10(5) to 1.3 X 10(6). Our study represents an important step toward the development of next generation large-area advanced optoelectronics.

引用

页码：8015 / 8023

页数：9

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